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KT316D (2T316D) = 2N2784, 2SC772, S822T Transistor Silicon USSR Lot of 4 pcs For Sale

KT316D (2T316D) = 2N2784, 2SC772, S822T Transistor Silicon USSR Lot of 4 pcs
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KT316D (2T316D) = 2N2784, 2SC772, S822T Transistor Silicon USSR Lot of 4 pcs:
$6.47

KT316D (2T316D) = 2N2784, 2SC772, S822T Transistor SiliconUSSR

Lot of 4 pcs

New, never used /NOS / New Old Stock


KT316D (2T316D)

Transistors silicon epitaxial-planar structures n-p-n universal.

KT316D (2T316D):

• Structure of the transistor: n-p-n

• Р max - Constant dissipated collector power: 150 mW;

• fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: at least 800 MHz;

• Uke max - The maximum collector-emitter voltage for a given collector current and a given (finite) resistance in the base-emitter circuit: 10 V (3 kΩ);

• Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V; • Iк max - Maximum permissible constant collector current: 50 mA;

• I - Return current of the collector - current through the collector junction at a given collector-base return voltage and open-circuit emitter output: no more than 0.5 μA;

• h21E - Static current transfer ratio for a common emitter circuit in the large signal mode: 60 ... 300;

• Sk - Collector junction capacity: no more than 3 pF;

• Rke us - Resistance of saturation between the collector and the emitter: no more than 40 Ohm


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