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Russian N-Channel Enhancement ModeSIPMOS Small-Signal TransistorKT505A
Lot of 20 pcs
Similar to BSS295
FET Feature Logic Level Gate
Drain to Source Voltage 50V
Gate to Source Voltage 10V
Continuous Drain Curren 250mA
Pulsed Drain Curent 1A
Maximum power dissipation 1.0W
Gate leakage current <0,1μA
The threshold gate voltage 0.8...2V
Drain-source resistance (open.) 0.3 Ohm
Forward transconductance 0.5-1.6
Input capacity 425 pF
Output capacity 170 pF
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Buyer pays fixed shipping costsincludinginsurancefor any country.Shipping costs for this item can be found in the sectionShipping and Payments.This item will be shipped to you from Europe (Ukraine) by Registered Airmail within 1-2 business days after payment is received and verified.
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